Deck 34: Thyristors
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Deck 34: Thyristors
1
Because a triac requires different gate currents for each mode of operation, it is ______________.
asymmetrical
2
Some triacs have built-in ______________ which reduces the number of components and connections in some cases.
DIACs
3
The ______________ transistor is a three-terminal semiconductor device that has only one p-n junction.
unijunction
4
The ______________ standoff ratio of a UJT is usually designated as ? or eta.
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5
______________ can be designed to handle much higher load currents than triacs.
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6
Thyristors (can/cannot) be used for amplification.
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7
______________ are primarily used in power control circuits.
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8
An SCR differs from an ordinary rectifier diode in that the SCR will remain in a(n) ______________ state, although forward biased, until the forward breakover voltage is reached.
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9
The ______________ will automatically turn off when the anode voltage drops to zero or goes negative.
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10
A device that can control ac power, because it can conduct in either direction is called a(n) ______________.
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11
Which triac triggering mode is the most sensitive?
A) 1
B) 2
C) 3
D) 4
A) 1
B) 2
C) 3
D) 4
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12
What is often used in conjunction with a triac to ensure that the triggering time is the same for both the positive and negative alternation of the applied voltage?
A) zener diode
B) DIAC
C) RC circuit
D) LC tank circuit
A) zener diode
B) DIAC
C) RC circuit
D) LC tank circuit
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13
A three-terminal semiconductor device that has only one p-n junction is a(n)
A) JFET
B) triac
C) unijunction transistor
D) E-MOSFET
A) JFET
B) triac
C) unijunction transistor
D) E-MOSFET
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14
The ratio ofto the interbase resistance, RBB is called the 
A) resistive interbase ratio
B) interbase standup ratio
C) intrinsic standoff ratio
D) intrinsic interbase ratio

A) resistive interbase ratio
B) interbase standup ratio
C) intrinsic standoff ratio
D) intrinsic interbase ratio
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15
The UJT's intrinsic standoff ratio is usually designated as
A) ?
B) ?
C) ?
D) ?
A) ?
B) ?
C) ?
D) ?
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16
Beyond the valley points labeled IV and VV (in the saturation region), the UJT's resistance is 
A) very low
B) very high
C) negative
D) positive

A) very low
B) very high
C) negative
D) positive
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17
What is the function of D5 in the circuit shown in Figure 32-14? 
A) rectifies ac
B) provides a positive trigger to the SCR
C) provides voltage for the UJT
D) provides ac to the load

A) rectifies ac
B) provides a positive trigger to the SCR
C) provides voltage for the UJT
D) provides ac to the load
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18
What component controls the frequency of the UJT relaxation oscillator?
A) D4
B) D5
C) R2
D) RT
A) D4
B) D5
C) R2
D) RT
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19
Semiconductor devices that are specifically designed for use in high-power switching applications are
A) MOSFETs
B) JFETs
C) thyristors
D) BJTs
A) MOSFETs
B) JFETs
C) thyristors
D) BJTs
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20
Which of the following is not an application of high-power thyristors?
A) heaters
B) welders
C) rf amplifiers
D) voltage regulators
A) heaters
B) welders
C) rf amplifiers
D) voltage regulators
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21
The region where the voltage drop across a DIAC decreases as the DIAC current increases is called
A) reverse bias region
B) negative resistance region
C) negative breakdown region
D) reverse resistance region
A) reverse bias region
B) negative resistance region
C) negative breakdown region
D) reverse resistance region
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22
A three-layer, two-junction semiconductor device that has only two leads is a(n)
A) SCR
B) zener diode
C) DIAC
D) JFET
A) SCR
B) zener diode
C) DIAC
D) JFET
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23
The DIAC is often used to provide a sharp trigger current pulse that can be used to turn on another thyristor known as a
A) SCR
B) silicon-controlled switch
C) triac
D) JFET
A) SCR
B) silicon-controlled switch
C) triac
D) JFET
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24
A four-layer pnpn device with an anode, cathode, and gate is called a(n)
A) SCR
B) silicon-controlled switch
C) triac
D) JFET
A) SCR
B) silicon-controlled switch
C) triac
D) JFET
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25
SCRs can safely handle anode currents from less than 1 A to
A) 5 A
B) 10 A
C) 100 A
D) 500 A
A) 5 A
B) 10 A
C) 100 A
D) 500 A
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26
Once an SCR is turned on by gate current, the gate
A) turns it off right away
B) turns it off after the time set up by R and C
C) loses all control
D) current must be removed
A) turns it off right away
B) turns it off after the time set up by R and C
C) loses all control
D) current must be removed
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27
A bi-directional semiconductor device that remains in a nonconducting state until the forward breakover voltage is reached is a(n)
A) DIAC
B) SCR
C) triac
D) E-MOSFET
A) DIAC
B) SCR
C) triac
D) E-MOSFET
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28
Which triac triggering mode is the most sensitive?
A) 1
B) 2
C) 3
D) 4
A) 1
B) 2
C) 3
D) 4
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29
Along with transistors and FETs, thyristors can be used for amplification.
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30
Thyristors are semiconductor devices that are specifically designed for use in high-power switching applications.
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31
Thyristors can operate only in the switching mode, where they act like either an open or closed switch.
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32
A DIAC is a three-layer, two-junction semiconductor device that has only two leads.
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33
A DIAC is referred to as a unidirectional diode thyristor because it can conduct current in only one direction.
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34
DIACs are primarily used in power control circuits.
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35
A silicon controlled rectifier is a four-layer pnpn device.
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36
An SCR operates in the same way as a rectifier diode.
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37
Low current SCRs resemble an ordinary transistor with three leads protruding from the body.
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38
SCRs can only handle anode currents of less than 1 A.
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39
The SCR remains in the on state as long as the anode current is greater than the holding current.
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40
When the SCR is turned on by the gate current, the gate current continues to control the SCR.
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41
The capacitor and resistor voltage in a series RC circuit are always 180° out of phase.
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42
SCRs can only conduct in one direction.
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43
A device that can control ac power, because it can conduct in either direction, is called a triac.
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