Deck 6: Cassetteless Equipment and Image Acquisition
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Deck 6: Cassetteless Equipment and Image Acquisition
1
Which of the following have the greatest DQE?
A)Film/screen systems
B)Cassette-based radiography
C)Cassetteless radiography
D)All have the same DQE.
A)Film/screen systems
B)Cassette-based radiography
C)Cassetteless radiography
D)All have the same DQE.
Cassetteless radiography
2
The smaller the area of the TFT photodiodes, the less radiation can be detected.
False
3
A device that includes a photosensitive array and small pixels that convert light into electrical charges is known as a ______ transistor.
A)Thin-field
B)Field-effect
C)Thin-film
D)Field-energy
A)Thin-field
B)Field-effect
C)Thin-film
D)Field-energy
Thin-film
4
A highly efficient indirect conversion system that takes up less fill space than CCDs is known as a ______.
A)Charge-coupled device
B)Field-effect transistor
C)CMOS
D)Thin-field transistor
A)Charge-coupled device
B)Field-effect transistor
C)CMOS
D)Thin-field transistor
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5
The number and size of pixels available are determined by matrix size. This is known as the ______ factor.
A)Fill
B)Size
C)TFT
D)DQE
A)Fill
B)Size
C)TFT
D)DQE
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6
Detective quantum efficiency is a measurement of the ______.
A)Total number of x-rays that is absorbed
B)Percentage of light that is absorbed
C)Percentage of x-rays absorbed
D)Total amount of light that is absorbed
A)Total number of x-rays that is absorbed
B)Percentage of light that is absorbed
C)Percentage of x-rays absorbed
D)Total amount of light that is absorbed
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7
A device that acts like a camera in an indirect conversion detector is known as a ______.
A)Charge-coupled device
B)Field-effect transistor
C)CMOS
D)Thin-field transistor
A)Charge-coupled device
B)Field-effect transistor
C)CMOS
D)Thin-field transistor
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8
The type of flat-panel detector that uses thin films of silicon integrated with arrays of photodiodes is known as a ______.
A)CsI detector
B)Charge-coupled device
C)CMOS
D)Amorphous silicon detector
A)CsI detector
B)Charge-coupled device
C)CMOS
D)Amorphous silicon detector
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9
Digital imaging systems have ______.
A)Narrower DQE latitude than screen/film systems
B)Wider DQE latitude than screen/film systems
C)The same DQE latitude as screen/film systems
D)No DQE latitude
A)Narrower DQE latitude than screen/film systems
B)Wider DQE latitude than screen/film systems
C)The same DQE latitude as screen/film systems
D)No DQE latitude
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10
In cesium iodide detectors, ______.
A)There is a great deal of light spread
B)Crystalline needles block light from the detector
C)Light hitting the photodiode reduces the charge
D)Light spread causes resolution to decrease
A)There is a great deal of light spread
B)Crystalline needles block light from the detector
C)Light hitting the photodiode reduces the charge
D)Light spread causes resolution to decrease
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11
Flat-panel detectors that use indirect conversion technology convert ______.
A)Electrical signals to light
B)Light to x-rays
C)X-rays to electrical signals
D)X-rays to visible light
A)Electrical signals to light
B)Light to x-rays
C)X-rays to electrical signals
D)X-rays to visible light
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12
The indirect conversion detector system that requires optical coupling and image size reduction is known as a ______.
A)Charge-coupled device
B)Field-effect transistor
C)CMOS
D)Thin-field transistor
A)Charge-coupled device
B)Field-effect transistor
C)CMOS
D)Thin-field transistor
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13
Which of the following flat-panel detector technologies was developed by NASA?
A)Charge-coupled device
B)Field-effect transistor
C)CMOS
D)Thin-field transistor
A)Charge-coupled device
B)Field-effect transistor
C)CMOS
D)Thin-field transistor
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14
In a flat-panel detector, specialized silicon integrated circuits control ______.
A)Line scanning sequence
B)Readout
C)Amplification
D)Analog-to-digital conversion
A)Line scanning sequence
B)Readout
C)Amplification
D)Analog-to-digital conversion
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15
A device that acts like a switch to send electrical charges to the image processor in a direct conversion flat-panel detector is known as a ______ transistor.
A)Thin-field
B)Field-effect
C)Thin-film
D)Field-energy
A)Thin-field
B)Field-effect
C)Thin-film
D)Field-energy
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16
Indirect conversion in flat-panel detectors is a ______-step process.
A)One
B)Two
C)Three
D)Four
A)One
B)Two
C)Three
D)Four
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17
When specialized pixels in a complementary metal oxide silicon system are struck with x-ray photons, ______.
A)The x-ray photons are converted into light
B)Light photons are stored in capacitors
C)Light photons are converted into electrical charges
D)All of the above
A)The x-ray photons are converted into light
B)Light photons are stored in capacitors
C)Light photons are converted into electrical charges
D)All of the above
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18
A detector in which each pixel has its own amplifier is known as a ______.
A)Charge-coupled device
B)Field-effect transistor
C)CMOS
D)Thin-field transistor
A)Charge-coupled device
B)Field-effect transistor
C)CMOS
D)Thin-field transistor
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19
The DQE of detectors changes with changes in ______.
A)Milliampere-seconds
B)Kilovoltage peak
C)Distance
D)Temperature
A)Milliampere-seconds
B)Kilovoltage peak
C)Distance
D)Temperature
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20
Cesium iodide detectors use ______.
A)Rare-earth scintillators
B)Thin crystalline needles
C)Miniature cameras
D)Specialized pixel sensors
A)Rare-earth scintillators
B)Thin crystalline needles
C)Miniature cameras
D)Specialized pixel sensors
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21
Excessive digital processing can lead to ______.
A)High resolution
B)Low noise
C)High noise
D)Low dose
A)High resolution
B)Low noise
C)High noise
D)Low dose
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22
Incomplete charge transfer with cassetteless systems results in ______.
A)Inaccuracies in pixel values in subsequent exposures
B)Electronic memory artifact
C)Both A and B
D)Neither A nor B
A)Inaccuracies in pixel values in subsequent exposures
B)Electronic memory artifact
C)Both A and B
D)Neither A nor B
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23
Which of the following will increase resolution?
A)Small matrix, large pixels
B)Small matrix, small pixels
C)Large matrix, large pixels
D)Large matrix, small pixels
A)Small matrix, large pixels
B)Small matrix, small pixels
C)Large matrix, large pixels
D)Large matrix, small pixels
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24
The larger the matrix, the ______.
A)Larger the image
B)More storage space needed
C)Both A and B
D)Neither A nor B
A)Larger the image
B)More storage space needed
C)Both A and B
D)Neither A nor B
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25
The main factor that limits image quality in cassetteless image acquisition is ______.
A)Time
B)Heat
C)Noise
D)DQE
A)Time
B)Heat
C)Noise
D)DQE
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26
Pixel pitch refers to the ______.
A)Angle of the pixel
B)Size of the pixel
C)Space between pixels
D)Tone value of pixels
A)Angle of the pixel
B)Size of the pixel
C)Space between pixels
D)Tone value of pixels
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27
Detectors must be ______.
A)Smaller than the area to be imaged
B)As large as possible
C)Large enough to cover the area to be imaged
D)The same size for every part to be imaged
A)Smaller than the area to be imaged
B)As large as possible
C)Large enough to cover the area to be imaged
D)The same size for every part to be imaged
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28
More pixels always mean better resolution.
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29
Electronic memory artifact occurs when exposures are taken in too rapid a sequence.
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30
Which of the following has the greatest spatial resolution?
A)Film/screen radiography
B)Indirect digital detectors
C)Direct digital detectors
D)Spatial resolution is the same for all systems.
A)Film/screen radiography
B)Indirect digital detectors
C)Direct digital detectors
D)Spatial resolution is the same for all systems.
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