Optical Fiber Communications 4th Edition by Gerd Keiser

Exercise 14

Suppose we have a silicon pin photodiode which has a depletion layer width w = 20 m, an area A = 0.05 mm 2 , and a dielectric constant K s = 11.7. If the photodiode is to operate with a 10-k load resistor at 800 nm, where the absorption coefficient s = 10 3 cm -1 , compare the RC time constant and the carrier drift time of this device. Is carrier diffusion time of importance in this photodiode