Optical Fiber Communications 4th Edition by Gerd Keiser

Exercise 8

An InGaAs pin photodiode has the following parameters at 1550 nm: I D = 1.0 nA, = 0.95, R L = 500 , and the surface leakage current is negligible. The incident optical power is 500 nW (-33 dBm) and the receiver bandwidth is 150 MHz. Compare the noise currents given by Eqs. (6.14), (6.15), and (6.16).