Question 1

The first order grating (l=1) provide the strongest coupling within the device.

Accepted Answer

A) True 
 B)False  True

Question 2

Device which apply the frequency-selective feedback technique to provide single longitudinal operation are referred to as ________________

Accepted Answer

A) dsm lasers 
B) nd: yag lasers 
C) glass fiber lasers 
D) qd lasers 
A) dsm lasers 
B) nd: yag lasers 
C) glass fiber lasers 
D) qd lasers A

Question 3

The InGaAsP/InP double channel planar DFB-BH laser with a quarter wavelength shifted first order grating provides a single frequency operation and incorporates a phase shift of ______________

Accepted Answer

A) ?/2 radians 
B) 2? radians 
C) ? radians 
D) 3?/2 radians 
A) ?/2 radians 
B) 2? radians 
C) ? radians 
D) 3?/2 radians A

Question 4

Better confinement of optical mode is obtained in

Accepted Answer

A) multi quantum well lasers. 
B) single quantum well lasers. 
C) gain guided lasers. 
D) bh lasers. 
A) multi quantum well lasers. 
B) single quantum well lasers. 
C) gain guided lasers. 
D) bh lasers.

Question 5

Line-width narrowing is achieved in DFB lasers by a strategy referred as _______________

Accepted Answer

A) noise partition 
B) grating 
C) tuning 
D) bragg wavelength detuning 
A) noise partition 
B) grating 
C) tuning 
D) bragg wavelength detuning

Question 6

Fabry-Perot devices with BH geometries high modulation speeds than DFB-BH lasers. State whether the given statement is true or false

Accepted Answer

A) True 
 B)False

Question 7

In the given equation, corrugation period is given by l?b/2Ne. If ?b is the Bragg wavelength, then what does 'l' stand for?

Accepted Answer

A) length of cavity 
B) limitation index 
C) integer order of grating 
D) refractive index 
A) length of cavity 
B) limitation index 
C) integer order of grating 
D) refractive index

Question 8

The parameter that prevents carrier from recombination is

Accepted Answer

A) auger recombination 
B) inter-valence band absorption 
C) carrier leakage 
D) low temperature sensitivity 
A) auger recombination 
B) inter-valence band absorption 
C) carrier leakage 
D) low temperature sensitivity

Question 9

The threshold temperature coefficient for InGaAsP devices is in the range of

Accepted Answer

A) 10-40 k 
B) 40-75 k 
C) 120-190 k 
D) 150-190 k 
A) 10-40 k 
B) 40-75 k 
C) 120-190 k 
D) 150-190 k

Question 10

Conventional cleaved mirror structures are difficult to fabricate with the cavity lengths below

Accepted Answer

A) 200?mand greater than 150 ?m 
B) 100 ?m and greater than 50 ?m 
C) 50 ?m 
D) 150 ?m 
A) 200?mand greater than 150 ?m 
B) 100 ?m and greater than 50 ?m 
C) 50 ?m 
D) 150 ?m

Question 11

The process where the energy released during the recombination of an electron-hole event getting transferred to another carrier is known as

Accepted Answer

A) inter-valence bond absorption 
B) auger recombination 
C) carrier leakage effects 
D) exothermic actions 
A) inter-valence bond absorption 
B) auger recombination 
C) carrier leakage effects 
D) exothermic actions

Question 12

Strip geometry of a device or laser is important.

Accepted Answer

A) True 
 B)False

Question 13

The semiconductor lasers employing the distributed feedback mechanism are classified in _________________ categories

Accepted Answer

A) one 
B) two 
C) three 
D) four 
A) one 
B) two 
C) three 
D) four

Question 14

Auger recombination can be reduced by using

Accepted Answer

A) strained mqw structure. 
B) strained sqw structure. 
C) gain-guided strained structure. 
D) strained quantum dots lasers. 
A) strained mqw structure. 
B) strained sqw structure. 
C) gain-guided strained structure. 
D) strained quantum dots lasers.

Question 15

DBF-BH lasers exhibit low threshold currents in the range of ________________

Accepted Answer

A) 40 to 50 ma 
B) 21 to 30 ma 
C) 2 to 5 ma 
D) 10 to 20 ma 
A) 40 to 50 ma 
B) 21 to 30 ma 
C) 2 to 5 ma 
D) 10 to 20 ma

Question 16

The narrow line-width obtained under the CW operation for quarter wavelength shifted DFB laser is ________________

Accepted Answer

A) 2 mhz 
B) 10 mhz 
C) 3 mhz 
D) 1 mhz 
A) 2 mhz 
B) 10 mhz 
C) 3 mhz 
D) 1 mhz

Question 17

Determine the threshold current density for an AlGaAs injection laser with T0=180k at 30°C.

Accepted Answer

A) 6.24 
B) 9.06 
C) 3.08 
D) 5.09 
A) 6.24 
B) 9.06 
C) 3.08 
D) 5.09

Question 18

High strain in strained MCQ structure should be incorporated.

Accepted Answer

A) True 
 B)False

Question 19

QD lasers have a very low threshold current densities of range

Accepted Answer

A) 0.5 to 5 a cm?2 
B) 2 to 10 a cm?2 
C) 10 to 30 a cm?2 
D) 6 to 20 a cm?2 
A) 0.5 to 5 a cm?2 
B) 2 to 10 a cm?2 
C) 10 to 30 a cm?2 
D) 6 to 20 a cm?2

Question 20

Multi-quantum devices have superior characteristics over

Accepted Answer

A) bh lasers. 
B) dh lasers. 
C) gain guided lasers. 
D) single-quantum-well devices. 
A) bh lasers. 
B) dh lasers. 
C) gain guided lasers. 
D) single-quantum-well devices.

The first order grating (l=1) provide the strongest coupling within the device.

Device which apply the frequency-selective feedback technique to provide single longitudinal operation are referred to as ________________

The InGaAsP/InP double channel planar DFB-BH laser with a quarter wavelength shifted first order grating provides a single frequency operation and incorporates a phase shift of ______________

Better confinement of optical mode is obtained in

Line-width narrowing is achieved in DFB lasers by a strategy referred as _______________

Fabry-Perot devices with BH geometries high modulation speeds than DFB-BH lasers. State whether the given statement is true or false

In the given equation, corrugation period is given by l?b/2Ne. If ?b is the Bragg wavelength, then what does 'l' stand for?

The parameter that prevents carrier from recombination is

The threshold temperature coefficient for InGaAsP devices is in the range of

Conventional cleaved mirror structures are difficult to fabricate with the cavity lengths below

The process where the energy released during the recombination of an electron-hole event getting transferred to another carrier is known as

Strip geometry of a device or laser is important.

The semiconductor lasers employing the distributed feedback mechanism are classified in _________________ categories

Auger recombination can be reduced by using

DBF-BH lasers exhibit low threshold currents in the range of ________________

The narrow line-width obtained under the CW operation for quarter wavelength shifted DFB laser is ________________

Determine the threshold current density for an AlGaAs injection laser with T0=180k at 30°C.

High strain in strained MCQ structure should be incorporated.

QD lasers have a very low threshold current densities of range

Multi-quantum devices have superior characteristics over

Fiber Optics Communication

Optical Fibers: Refraction, Transmission Losses, and Dispersion

Fiber Optics: Dispersion, Absorption, and Losses

Optical Fiber Communication: Scattering, Polarization, and Dispersion

Fiber Optics and Dispersion

Fiber Optics Fabrication Techniques and Phenomena

Optical Fiber Communication and Fabrication

Various Aspects of Optical Fiber Design and Performance

Fiber Optic Coupling and Losses

Fiber Splicing Techniques and Requirements

Optical Fiber Devices and Components

Yag Laser and Optical Fiber Communications

Semiconductor Laser Technologies: Refractive Index, Junctions, Efficiency, and Structures

Key Concepts in Laser and Optical Fiber Communication Technology

Laser Technology and Devices

Led Efficiency and Power Generation in Optical Communication

Optical Communication and Led Performance Analysis

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Exam 14: Semiconductor Laser Devices and Mechanisms

The first order grating (l=1) provide the strongest coupling within the device.

Device which apply the frequency-selective feedback technique to provide single longitudinal operation are referred to as ________________

The InGaAsP/InP double channel planar DFB-BH laser with a quarter wavelength shifted first order grating provides a single frequency operation and incorporates a phase shift of ______________

Better confinement of optical mode is obtained in

Line-width narrowing is achieved in DFB lasers by a strategy referred as _______________

Fabry-Perot devices with BH geometries high modulation speeds than DFB-BH lasers. State whether the given statement is true or false

In the given equation, corrugation period is given by l?b/2Ne. If ?b is the Bragg wavelength, then what does 'l' stand for?

The parameter that prevents carrier from recombination is

The threshold temperature coefficient for InGaAsP devices is in the range of

Conventional cleaved mirror structures are difficult to fabricate with the cavity lengths below

The process where the energy released during the recombination of an electron-hole event getting transferred to another carrier is known as

Strip geometry of a device or laser is important.

The semiconductor lasers employing the distributed feedback mechanism are classified in _________________ categories

Auger recombination can be reduced by using

DBF-BH lasers exhibit low threshold currents in the range of ________________

The narrow line-width obtained under the CW operation for quarter wavelength shifted DFB laser is ________________

Determine the threshold current density for an AlGaAs injection laser with T0=180k at 30°C.

High strain in strained MCQ structure should be incorporated.

QD lasers have a very low threshold current densities of range

Multi-quantum devices have superior characteristics over

Fiber Optics Communication

Optical Fibers: Refraction, Transmission Losses, and Dispersion

Fiber Optics: Dispersion, Absorption, and Losses

Optical Fiber Communication: Scattering, Polarization, and Dispersion

Fiber Optics and Dispersion

Fiber Optics Fabrication Techniques and Phenomena

Optical Fiber Communication and Fabrication

Various Aspects of Optical Fiber Design and Performance

Fiber Optic Coupling and Losses

Fiber Splicing Techniques and Requirements

Optical Fiber Devices and Components

Yag Laser and Optical Fiber Communications

Semiconductor Laser Technologies: Refractive Index, Junctions, Efficiency, and Structures

Key Concepts in Laser and Optical Fiber Communication Technology

Laser Technology and Devices

Led Efficiency and Power Generation in Optical Communication

Optical Communication and Led Performance Analysis

Filters