Exam 2: BJT Stability and Biasing Techniques

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What is the compensation element used for variation in VBE and ICO?

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A

For a fixed bias circuit having Ic = 0.3mA and In=0.0003mA, S is

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C

For an ideal transistor having a fixed bias configuration, what will be the value of Beta?

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C

In the given circuit, what is the value of VE when using a silicon BJT?

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For a fixed bias circuit having RC=2Kohm and VCC=60V, IB=0.25mA and S=101, find Vce.

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For a n-p-n transistor, the collector current changed from 0.2mA to 0.22mA resulting a change of base emitter voltage from 0.8v to 0.8005V. What is the value of Stability factor?

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Increase in collector emitter voltage from 5V to 8V causes increase in collector current from 5mA to 5.3mA. Determine the dynamic output resistance.

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In a silicon transistor, which of the following change significantly to the change in IC?

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In the given circuit, what is the value of IC if the BJT is made of Silicon?

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The compensation techniques are used to                   

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The base current for a BJT remains constant at 5mA, the collector current changes from 0.2mA to 0.3 mA and beta was changed from 100 to 110, then calculate the value of S.

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In the given situation for n-channel JFET, we get drain-to-source current is 5mA. What is the current when VGS = - 6V?

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Comparing fixed and collector to base bias which of the following statement is true?

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The output resistance of CB transistor is given by                    

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The temperature changes do not affect the Stability.

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What is Stability factor?

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The expression for IC in the compensation for instability due to ICO variation                   

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Which of the following has a negative temperature coefficient of resistance?

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In the given circuit, using a silicon BJT, what is the value of VCE?

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Which of the following has a negative temperature coefficient of resistance?

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