Exam 2: BJT Stability and Biasing Techniques
Exam 1: Bipolar Junction Transistors BJTS25 Questions
Exam 2: BJT Stability and Biasing Techniques24 Questions
Exam 3: Transistor Biasing and Circuit Analysis25 Questions
Exam 4: Transistor Amplifier18 Questions
Exam 5: Electrical Engineering Circuit Analysis25 Questions
Exam 6: BJT Frequency Response and Capacitance Analysis22 Questions
Exam 7: Electrical Engineering on Capacitance, Amplifiers, and Switching Regulators22 Questions
Exam 8: Electronics and Power Supply23 Questions
Exam 9: HVDC Transmission, DC Power Supplies, and Zener Diodes12 Questions
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What is the compensation element used for variation in VBE and ICO?
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A
For a fixed bias circuit having Ic = 0.3mA and In=0.0003mA, S is
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Correct Answer:
C
For an ideal transistor having a fixed bias configuration, what will be the value of Beta?
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Correct Answer:
C
In the given circuit, what is the value of VE when using a silicon BJT?
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For a fixed bias circuit having RC=2Kohm and VCC=60V, IB=0.25mA and S=101, find Vce.
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For a n-p-n transistor, the collector current changed from 0.2mA to 0.22mA resulting a change of base emitter voltage from 0.8v to 0.8005V. What is the value of Stability factor?
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Increase in collector emitter voltage from 5V to 8V causes increase in collector current from 5mA to 5.3mA. Determine the dynamic output resistance.
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In a silicon transistor, which of the following change significantly to the change in IC?
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In the given circuit, what is the value of IC if the BJT is made of Silicon?
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The base current for a BJT remains constant at 5mA, the collector current changes from 0.2mA to 0.3 mA and beta was changed from 100 to 110, then calculate the value of S.
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In the given situation for n-channel JFET, we get drain-to-source current is 5mA. What is the current when VGS = - 6V?
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Comparing fixed and collector to base bias which of the following statement is true?
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The expression for IC in the compensation for instability due to ICO variation
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Which of the following has a negative temperature coefficient of resistance?
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In the given circuit, using a silicon BJT, what is the value of VCE?
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Which of the following has a negative temperature coefficient of resistance?
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