Solved

Figure 551
the MOSFETs in the Circuits of Fig k=1 mA/V2,Vt=1 Vk=1 \mathrm{~mA} / \mathrm{V}^{2},\left|V_{t}\right|=1 \mathrm{~V}

Question 4

Essay

     Figure 5.5.1 The MOSFETs in the circuits of Fig. 5.5.1 have  k=1 \mathrm{~mA} / \mathrm{V}^{2},\left|V_{t}\right|=1 \mathrm{~V} , and  \lambda=0 . (a) For the circuit in Fig. 5.5.1(a), find the values of  R_{D}  and  R_{S}  that result in the MOSFET operating at the edge of the saturation region with  I_{D}=0.1 \mathrm{~mA} . (b) For the circuit in Fig. 5.5.1(b), find  I_{D}  and  R_{D} . (c) For the circuit in Fig. 5.5.1(c), find  I_{D N}, I_{D P} , and  V_{O} . Also, find the drain-to-source incremental resistance of each of  Q_{N}  and  Q_{P} .

Figure 5.5.1
The MOSFETs in the circuits of Fig. 5.5.1 have k=1 mA/V2,Vt=1 Vk=1 \mathrm{~mA} / \mathrm{V}^{2},\left|V_{t}\right|=1 \mathrm{~V} , and λ=0\lambda=0 .
(a) For the circuit in Fig. 5.5.1(a), find the values of RDR_{D} and RSR_{S} that result in the MOSFET operating at the edge of the saturation region with ID=0.1 mAI_{D}=0.1 \mathrm{~mA} .
(b) For the circuit in Fig. 5.5.1(b), find IDI_{D} and RDR_{D} .
(c) For the circuit in Fig. 5.5.1(c), find IDN,IDPI_{D N}, I_{D P} , and VOV_{O} . Also, find the drain-to-source incremental resistance of each of QNQ_{N} and QPQ_{P} .

Correct Answer:

verifed

Verified

(a)
blured image

For operation at the edge of sat...

View Answer

Unlock this answer now
Get Access to more Verified Answers free of charge

Related Questions