Exam 29: Molecules and Solids

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A p-type semiconductor is produced by

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A

A diatomic molecule has 18×105eV18 \times 10 ^ { - 5 } \mathrm { eV } of rotational energy in the L=2L = 2 quantum state. What is its rotational energy in the L=0L = 0 quantum state? (1eV=1.60×1019 J,h=6.626×1034 Js)\left( 1 \mathrm { eV } = 1.60 \times 10 ^ { - 19 } \mathrm {~J} , h = 6.626 \times 10 ^ { - 34 } \mathrm {~J} \cdot \mathrm { s } \right)

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For a diatomic quantum mechanical vibrator, the energy difference between adjacent quantum states

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A diatomic molecule is vibrating in the v=1v = 1 quantum state with a frequency of 2.0×1013 Hz2.0 \times 10 ^ { 13 } \mathrm {~Hz} . What is its vibrational energy? (1eV=1.60×1019 J,h=6.626×1034 Js)\left( 1 \mathrm { eV } = 1.60 \times 10 ^ { - 19 } \mathrm {~J} , h = 6.626 \times 10 ^ { - 34 } \mathrm {~J} \cdot \mathrm { s } \right)

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Estimate the maximum rotational energy (in electron-volts) for a free and freely-spinning diatomic hydrogen molecule in the L=2L = 2 quantum state. The equilibrium separation for the atoms in the H2\mathrm { H } _ { 2 } molecule is 0.075 nm.(1eV=1.60×1019 J,mproton =1.67×1027 kg,h=6.626×10340.075 \mathrm {~nm} . \left( 1 \mathrm { eV } = 1.60 \times 10 ^ { - 19 } \mathrm {~J} , m _ { \text {proton } } = 1.67 \times 10 ^ { - 27 } \mathrm {~kg} , h = 6.626 \times 10 ^ { - 34 } \right. J.s)

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A diatomic molecule has 2.6×105eV2.6 \times 10 ^ { - 5 } \mathrm { eV } of rotational energy in the L=2L = 2 quantum state. What is its rotational energy in the L=1L = 1 quantum state? (1eV=1.60×1019 J,h=6.626×1034 Js)\left( 1 \mathrm { eV } = 1.60 \times 10 ^ { - 19 } \mathrm {~J} , h = 6.626 \times 10 ^ { - 34 } \mathrm {~J} \cdot \mathrm { s } \right)

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If a battery is connected to a diode with the positive terminal to the p side and the negative terminal to the n side, then diode is said to be

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In its lowest quantum state, a diatomic quantum mechanical rotator has a rotational energy of

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In a p-type semiconductor, a hole is

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The energy gap between the valence and conduction bands in a certain semiconductor is 1.25eV1.25 \mathrm { eV } . What is the threshold wavelength for optical absorption in this substance? (c=3.00×108 m/s,h=\left( c = 3.00 \times 10 ^ { 8 } \mathrm {~m} / \mathrm { s } , h = \right. 6.626×1034 Js6.626 \times 10 ^ { - 34 } \mathrm {~J} \cdot \mathrm { s } )

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An n-type semiconductor is produced by

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A diatomic quantum mechanical oscillator has a moment of inertia of 7.73×1045 kgm27.73 \times 10 ^ { - 45 } \mathrm {~kg} \cdot \mathrm { m } ^ { 2 } . What is the rotational energy when it is in the quantum state characterized by L=2L = 2 ? (1eV=1.60×1019\left( 1 \mathrm { eV } = 1.60 \times 10 ^ { - 19 } \right. J,h=6.626×1034 Js)\left. \mathrm { J } , h = 6.626 \times 10 ^ { - 34 } \mathrm {~J} \cdot \mathrm { s } \right)

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A simple junction transistor consists of three semiconductor sections consisting of

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Covalent bonding is due to

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Metallic bonding is due to

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Ionic bonding is due to

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In a good insulator, the highest energy band containing electrons, called the valence band, is

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In a good conductor, the highest energy band containing electrons is

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For a diatomic quantum mechanical rotator, the energy difference between adjacent energy levels

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When a voltage is applied across a p-type semiconductor, the holes

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