Question 1

Because a bipolar junction transistor has a negative temperature coefficient,it may be damaged by

Accepted Answer

A)  static charges. 
B)  thermal runaway. 
C)  improper grounding. 
D)  improper coupling. 
A)  static charges. 
B)  thermal runaway. 
C)  improper grounding. 
D)  improper coupling.

Question 2

When the input voltage to the circuit shown in Figure 12-16 is 0 V

Accepted Answer

A)  the LED is on. 
B)  the LED is off. 
C)  the drain voltage is +20 V. 
D)  the source voltage is +20 V. 
A)  the LED is on. 
B)  the LED is off. 
C)  the drain voltage is +20 V. 
D)  the source voltage is +20 V.

Question 3

One major advantage of a power FET over a bipolar junction transistor is

Accepted Answer

A)  that an FET is current controlleD. 
B)  the lack of thermal runaway. 
C)  the lower input resistance. 
D)  it requires a larger heat sink. 
A)  that an FET is current controlleD. 
B)  the lack of thermal runaway. 
C)  the lower input resistance. 
D)  it requires a larger heat sink.

Question 4

A power FET that operates as a device B and allows device A to communicate with or control device C is called

Accepted Answer

A)  a connector. 
B)  an interface. 
C)  a coupler. 
D)  a transceiver. 
A)  a connector. 
B)  an interface. 
C)  a coupler. 
D)  a transceiver.

Question 5

Personal computers have proliferated because of what semiconductor device?

Accepted Answer

A)  BJT 
B)  E-MOSFET 
C)  JFET 
D)  depletion-mode MOSFET 
A)  BJT 
B)  E-MOSFET 
C)  JFET 
D)  depletion-mode MOSFET

Question 6

When the gate voltage of the E-MOSFET is well above the threshold voltage,the device switches from cutoff to saturation.

Accepted Answer

A) True 
 B)False

Because a bipolar junction transistor has a negative temperature coefficient,it may be damaged by

When the input voltage to the circuit shown in Figure 12-16 is 0 V

One major advantage of a power FET over a bipolar junction transistor is

A power FET that operates as a device B and allows device A to communicate with or control device C is called

Personal computers have proliferated because of what semiconductor device?

When the gate voltage of the E-MOSFET is well above the threshold voltage,the device switches from cutoff to saturation.

Introduction

Semoconductors

Diode Theory Key

Diode Circuits

Special-Purpose Diodes Key

BJT Fumdamentals

BJT Biasing

Basic BJT Amplifiers

Multistage,CC,and CB Amplifiers

Power Amplifiers

JFETS

Thyristors

Frequency Effects

Differential Amplifiers

Operational Amplifiers

Negative Feedback

Linear OP AMP Circuits

Active Filters Key

Nonlinear Op-Amp Circuit Applications Key

Oscillators Key

Regulated Power Supplies Key

Filters

Exam 12: Mosfets

Because a bipolar junction transistor has a negative temperature coefficient,it may be damaged by

When the input voltage to the circuit shown in Figure 12-16 is 0 V

One major advantage of a power FET over a bipolar junction transistor is

A power FET that operates as a device B and allows device A to communicate with or control device C is called

Personal computers have proliferated because of what semiconductor device?

When the gate voltage of the E-MOSFET is well above the threshold voltage,the device switches from cutoff to saturation.

Introduction

Semoconductors

Diode Theory Key

Diode Circuits

Special-Purpose Diodes Key

BJT Fumdamentals

BJT Biasing

Basic BJT Amplifiers

Multistage,CC,and CB Amplifiers

Power Amplifiers

JFETS

Thyristors

Frequency Effects

Differential Amplifiers

Operational Amplifiers

Negative Feedback

Linear OP AMP Circuits

Active Filters Key

Nonlinear Op-Amp Circuit Applications Key

Oscillators Key

Regulated Power Supplies Key

Filters