Question 1

Donor atoms introduced into a pure semiconductor at room temperature:

Accepted Answer

A) increase the number of electrons in the conduction band 
B) increase the number of holes in the valence band 
C) lower the Fermi level 
D) increase the electrical resistivity 
E) none of the above 
A) increase the number of electrons in the conduction band 
B) increase the number of holes in the valence band 
C) lower the Fermi level 
D) increase the electrical resistivity 
E) none of the above

Question 2

An acceptor replacement atom in silicon might have ______ electrons in its outer shell.

Accepted Answer

A) 3 
B) 4 
C) 5 
D) 6 
E) 7 
A) 3 
B) 4 
C) 5 
D) 6 
E) 7

Question 3

Application of a forward bias to a p-n junction:

Accepted Answer

A) increases the drift current in the depletion zone 
B) increases the diffusion current in the depletion zone 
C) decreases the drift current on the p side outside the depletion zone 
D) decreases the drift current on the n side outside the depletion zone 
E) does not change the current anywhere 
A) increases the drift current in the depletion zone 
B) increases the diffusion current in the depletion zone 
C) decreases the drift current on the p side outside the depletion zone 
D) decreases the drift current on the n side outside the depletion zone 
E) does not change the current anywhere

Question 4

Acceptor atoms introduced into a pure semiconductor at room temperature:

Accepted Answer

A) increase the number of electrons in the conduction band 
B) increase the number of holes in the valence band 
C) lower the Fermi level 
D) increase the electrical resistivity 
E) none of the above 
A) increase the number of electrons in the conduction band 
B) increase the number of holes in the valence band 
C) lower the Fermi level 
D) increase the electrical resistivity 
E) none of the above

Question 5

A given doped semiconductor can be identified as p or n type by:

Accepted Answer

A) measuring its electrical conductivity 
B) measuring its magnetic susceptibility 
C) measuring its coefficient of resistivity 
D) measuring its heat capacity 
E) performing a Hall effect experiment 
A) measuring its electrical conductivity 
B) measuring its magnetic susceptibility 
C) measuring its coefficient of resistivity 
D) measuring its heat capacity 
E) performing a Hall effect experiment

Question 6

The energy level diagram shown applies to:

Accepted Answer

A) a conductor 
B) an insulator 
C) a semiconductor 
D) an isolated molecule 
E) an isolated atom 
A) a conductor 
B) an insulator 
C) a semiconductor 
D) an isolated molecule 
E) an isolated atom

Question 7

A sinusoidal potential difference Vin = Vmsin(   t)is applied to the p-n junction as shown.Which graph correctly shows Vout as a function of time?

Accepted Answer

A) I 
B) II 
C) III 
D) IV 
E) V 
A) I 
B) II 
C) III 
D) IV 
E) V

Question 8

A certain material has a resistivity of 7.8 *10-8  $\Omega$.m at room temperature, and its resistivity increases as the temperature is raised by 100°C.The material is most likely:

Accepted Answer

A) a metal 
B) a pure semiconductor 
C) a heavily doped semiconductor 
D) an insulator 
E) none of the above 
A) a metal 
B) a pure semiconductor 
C) a heavily doped semiconductor 
D) an insulator 
E) none of the above

Question 9

The number density n of conduction electrons, the resistivity    , and the temperature coefficient of resistivity $\alpha$ are given below for five materials.Which is a semiconductor?

Accepted Answer

A)   
B)   
C)   
D)   
E)   
A)   
B)   
C)   
D)   
E)

Question 10

The energy level diagram shown applies to:

Accepted Answer

A) a conductor 
B) an insulator 
C) a semiconductor 
D) an isolated molecule 
E) an isolated atom 
A) a conductor 
B) an insulator 
C) a semiconductor 
D) an isolated molecule 
E) an isolated atom

Question 11

For a pure semiconductor at room temperature the temperature coefficient of resistivity is determined primarily by:

Accepted Answer

A) the number of electrons in the conduction band 
B) the number of replacement atoms 
C) the binding energy of outer shell electrons 
D) collisions between conduction electrons and atoms 
E) none of the above 
A) the number of electrons in the conduction band 
B) the number of replacement atoms 
C) the binding energy of outer shell electrons 
D) collisions between conduction electrons and atoms 
E) none of the above

Exam 41: Conduction of Electricity in Solids

Donor atoms introduced into a pure semiconductor at room temperature:

An acceptor replacement atom in silicon might have ______ electrons in its outer shell.

Application of a forward bias to a p-n junction:

Acceptor atoms introduced into a pure semiconductor at room temperature:

A given doped semiconductor can be identified as p or n type by:

The energy level diagram shown applies to:

A sinusoidal potential difference Vin = Vmsin( t)is applied to the p-n junction as shown.Which graph correctly shows Vout as a function of time?

A certain material has a resistivity of 7.8 *10-8 Ω\OmegaΩ .m at room temperature, and its resistivity increases as the temperature is raised by 100°C.The material is most likely:

The number density n of conduction electrons, the resistivity , and the temperature coefficient of resistivity α\alphaα are given below for five materials.Which is a semiconductor?

The energy level diagram shown applies to:

For a pure semiconductor at room temperature the temperature coefficient of resistivity is determined primarily by:

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A sinusoidal potential difference V_in = V_msin( t)is applied to the p-n junction as shown.Which graph correctly shows V_out as a function of time?

A certain material has a resistivity of 7.8 *10^-8 $\Omega$ .m at room temperature, and its resistivity increases as the temperature is raised by 100°C.The material is most likely: